Cite this DOI

B Naga Raju, B. N. R. (2022). Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles. *Journal of Science & Technology*, *7*(10), 112–115. https://doi.org/10.46243/jst.2022.v7.i10.pp112-115

@article{bnagaraju2022path,
  author    = {B Naga Raju, B Naga Raju},
  title     = {{Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles}},
  journal   = {Journal of Science \& Technology},
  year      = {2022},
  month     = {dec},
  volume    = {7},
  number    = {10},
  pages     = {112--115},
  publisher = {Longman Publishers},
  issn      = {2456-5660},
  doi       = {10.46243/jst.2022.v7.i10.pp112-115},
  url       = {https://doi.org/10.46243/jst.2022.v7.i10.pp112-115},
  language  = {en},
  abstract  = {A new, comprehensive, physically-based, semi- empirical, local model for transverse-field dependent electron and hole mobility in GROUND VEHICLES transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLES I V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature}
}

TY  - JOUR
TI  - Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles
AU  - B Naga Raju, B Naga Raju
JO  - Journal of Science & Technology
PY  - 2022
DA  - 2022/12/21/
VL  - 7
IS  - 10
SP  - 112
EP  - 115
PB  - Longman Publishers
SN  - 2456-5660
LA  - en
AB  - A new, comprehensive, physically-based, semi- empirical, local model for transverse-field dependent electron and hole mobility in GROUND VEHICLES transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLES I V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature
DO  - 10.46243/jst.2022.v7.i10.pp112-115
UR  - https://doi.org/10.46243/jst.2022.v7.i10.pp112-115
ER  -

{
    "type": "article-journal",
    "id": "10.46243/jst.2022.v7.i10.pp112-115",
    "DOI": "10.46243/jst.2022.v7.i10.pp112-115",
    "URL": "https://doi.org/10.46243/jst.2022.v7.i10.pp112-115",
    "title": "Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles",
    "source": "Smart Scholars DOI Registry",
    "container-title": "Journal of Science & Technology",
    "author": [
        {
            "family": "B Naga Raju",
            "given": "B Naga Raju"
        }
    ],
    "issued": {
        "date-parts": [
            [
                2022,
                12,
                21
            ]
        ]
    },
    "volume": "7",
    "issue": "10",
    "page": "112-115",
    "publisher": "Longman Publishers",
    "language": "en",
    "abstract": "A new, comprehensive, physically-based, semi- empirical, local model for transverse-field dependent electron and hole mobility in GROUND VEHICLES transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLES I V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature",
    "ISSN": "2456-5660"
}

From the record as registered (version 2) — the record and its history. Programs: https://registry.smartscholars.in/api.php?action=cite&doi=10.46243%2Fjst.2022.v7.i10.pp112-115 gives all four in one JSON answer.