{ "ok": true, "doi": "10.46243/jst.2020.v5.i06.pp175-177", "doi_display": "10.46243/jst.2020.v5.i06.pp175-177", "doi_url": "https://doi.org/10.46243/jst.2020.v5.i06.pp175-177", "state": "registered", "url": "https://www.jst.org.in/index.php/pub/article/view/573", "title": "On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration", "version": 2, "registered_via": "crossref", "prefix": { "prefix": "10.46243", "status": "live" }, "registrant": { "name": "Longman Publishers", "kind": "publisher", "country": "India" }, "reserved_at": null, "registered_at": "2026-09-29 22:00:37", "updated_at": "2026-09-29 23:59:57", "withdrawn_at": null, "withdrawn_reason": null, "record": { "format": "smartscholars-doi-metadata/1.0", "doi": "10.46243/jst.2020.v5.i06.pp175-177", "referent": "Creation", "type": "JournalArticle", "structural_type": "Digital", "modes": [ "Visual" ], "characters": [ "Language" ], "titles": [ { "value": "On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration", "type": "PrincipalTitle", "lang": "en" } ], "identifiers": [ { "type": "DOI", "value": "10.46243/jst.2020.v5.i06.pp175-177" } ], "agents": [ { "role": "author", "name": { "given": "", "family": "S. Leelashyam" }, "sequence": "first" }, { "role": "author", "name": { "given": "", "family": "G Shobha" }, "sequence": "additional" }, { "role": "author", "name": { "given": "", "family": "L. Hari Prasad" }, "sequence": "additional" }, { "role": "publisher", "name": { "org": "Longman Publishers" } } ], "dates": { "published": "2020-12-29", "date_type": "PublicationDate", "online": "2020-12-29" }, "language": "en", "container": { "type": "Journal", "titles": [ { "value": "Journal of Science & Technology", "type": "PrincipalTitle" } ], "identifiers": [ { "type": "ISSN", "value": "2456-5660", "medium": "electronic" } ], "volume": "05", "issue": "06", "pages": { "first": "175", "last": "177" } }, "links": [ { "url": "https://www.jst.org.in/index.php/pub/article/view/573", "return_type": "text/html", "primary": true }, { "url": "https://www.jst.org.in/index.php/pub/article/download/573/512", "purpose": "text-mining", "return_type": "application/pdf" }, { "url": "https://www.jst.org.in/index.php/pub/article/download/573/3182", "purpose": "text-mining", "return_type": "application/xml" }, { "url": "https://www.jst.org.in/index.php/pub/article/view/573/512", "purpose": "similarity-checking" } ], "abstract": { "value": "Channel electron and hole mobilities in MOSFETs have been extracted in terms of the eRective vertical field for several substrate biases. After ascertaining that the 2-D drift–diRusion numerical device simulator is reproducing the substrate charge variation in the MOSFET with respect to the gate voltage, obtained from C–V data, the mobility versus eRective field behavior is extracted by comparing the simulated and measured Id–Vgs characteristics. A simple model has been constructed to fit the extracted mobility data in weak and strong inversion, for inversion-layer electrons and holes in n-MOSFET and p-MOSFET, respectively. © 2002 Elsevier Science Ltd. All rights reserved.", "lang": "en" }, "license": { "url": "https://creativecommons.org/licenses/by/4.0/", "start": "2020-12-29", "applies_to": "vor" }, "references": [ { "key": "ref1", "doi": "10.1109/16.658819", "unstructured": "[l] Enz C. RF MOS transistor modeling. 2000 FSA Design Modeling Work Shop. 2000. p. l–20. Villa S, Lacaita AL, Perron LM, Bez R. A physically-based model of the eRective mobility in heavily-doped n-MOS-FETs. IEEE Trans Electron Dev l998;45:ll0–5. Mujtaba SA, Dutton RW, Scharfetter DL. Semi-empirical local NMOS mobility model for a 2-D device simulation in- corporating screened minority impurity scattering. NUPAD V l994:3–6" }, { "key": "ref2", "doi": "10.1109/55.491829", "unstructured": "Shin S. Model for roll-oR behaviour of electron eRective mobility from universal curve. Electron Lett l995;3l:l789–9l. Chen k, Wann HC, ko Pk, Hu C. The impact of device scaling and power supply change on CMOS gate perfor- mance. IEEE Electron Dev Lett l996;l7:202–4" }, { "key": "ref3", "doi": "10.1016/0038-1101(94)90005-1", "unstructured": "Van Dort MJ, Woerlee PH, Walker J. A simple model for quantization eRects in heavily-doped silicon MOSFETs at inversion conditions. Solid State Electron l994;37: 4ll–4. Sun SC, Plummer JD. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surface. IEEE Trans Electron Dev l980;27:l497–508. Takagi S, Toriumi A, Iwase M, Tango H. On the univer- sality of inversion layer mobility in Si MOSFETs: Part I. ERects of substrate doping concentration" }, { "key": "ref4", "doi": "10.1109/sispad.2000.871258", "unstructured": "IEEE Trans Electron Dev l994;4l:2357–68. Suetake M, Suematsu k, Nagakura H, Miura-Mattausch M, Mattausch HJ, kumashiro S, Yamaguchi T, Odanaka S, Nakayama N. HiSIM: A drift–diRusionbased advanced MOSFET model for circuit simulation with easy parameter extraction. SISPAD 2000:26l–4" } ], "record": { "registrant": "Longman Publishers", "registered": "2026-09-08", "updated": "2026-09-20", "issue_number": 1, "source": "crossref-api", "source_agency": "Crossref (member 25296)" } }, "record_sha256": "f643256db9298f3cdc7ae1cec71e74a39d7b1052799acb3371286069e3b4e5c3", "handle": { "synced_at": "2026-10-01 18:13:48", "url": "https://www.jst.org.in/index.php/pub/article/view/573" }, "links": { "record_page": "https://registry.smartscholars.in/record.php?doi=10.46243%2Fjst.2020.v5.i06.pp175-177", "system_metadata": "https://registry.smartscholars.in/resolve.php?doi=10.46243%2Fjst.2020.v5.i06.pp175-177&as=system", "history": "https://registry.smartscholars.in/api.php?action=history&doi=10.46243%2Fjst.2020.v5.i06.pp175-177", "kernel_xml": "https://registry.smartscholars.in/resolve.php?doi=10.46243%2Fjst.2020.v5.i06.pp175-177&as=xml" } }