Cite this DOI

S. Leelashyam, G Shobha, & L. Hari Prasad (2020). On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration. *Journal of Science & Technology*, *05*(06), 175–177. https://doi.org/10.46243/jst.2020.v5.i06.pp175-177

@article{sleelashyam2020universality,
  author    = {S. Leelashyam and G Shobha and L. Hari Prasad},
  title     = {{On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration}},
  journal   = {Journal of Science \& Technology},
  year      = {2020},
  month     = {dec},
  volume    = {05},
  number    = {06},
  pages     = {175--177},
  publisher = {Longman Publishers},
  issn      = {2456-5660},
  doi       = {10.46243/jst.2020.v5.i06.pp175-177},
  url       = {https://doi.org/10.46243/jst.2020.v5.i06.pp175-177},
  language  = {en},
  abstract  = {Channel electron and hole mobilities in MOSFETs have been extracted in terms of the eRective vertical field for several substrate biases. After ascertaining that the 2-D drift–diRusion numerical device simulator is reproducing the substrate charge variation in the MOSFET with respect to the gate voltage, obtained from C–V data, the mobility versus eRective field behavior is extracted by comparing the simulated and measured Id–Vgs characteristics. A simple model has been constructed to fit the extracted mobility data in weak and strong inversion, for inversion-layer electrons and holes in n-MOSFET and p-MOSFET, respectively. © 2002 Elsevier Science Ltd. All rights reserved.}
}

TY  - JOUR
TI  - On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration
AU  - S. Leelashyam
AU  - G Shobha
AU  - L. Hari Prasad
JO  - Journal of Science & Technology
PY  - 2020
DA  - 2020/12/29/
VL  - 05
IS  - 06
SP  - 175
EP  - 177
PB  - Longman Publishers
SN  - 2456-5660
LA  - en
AB  - Channel electron and hole mobilities in MOSFETs have been extracted in terms of the eRective vertical field for several substrate biases. After ascertaining that the 2-D drift–diRusion numerical device simulator is reproducing the substrate charge variation in the MOSFET with respect to the gate voltage, obtained from C–V data, the mobility versus eRective field behavior is extracted by comparing the simulated and measured Id–Vgs characteristics. A simple model has been constructed to fit the extracted mobility data in weak and strong inversion, for inversion-layer electrons and holes in n-MOSFET and p-MOSFET, respectively. © 2002 Elsevier Science Ltd. All rights reserved.
DO  - 10.46243/jst.2020.v5.i06.pp175-177
UR  - https://doi.org/10.46243/jst.2020.v5.i06.pp175-177
ER  -

{
    "type": "article-journal",
    "id": "10.46243/jst.2020.v5.i06.pp175-177",
    "DOI": "10.46243/jst.2020.v5.i06.pp175-177",
    "URL": "https://doi.org/10.46243/jst.2020.v5.i06.pp175-177",
    "title": "On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration",
    "source": "Smart Scholars DOI Registry",
    "container-title": "Journal of Science & Technology",
    "author": [
        {
            "family": "S. Leelashyam"
        },
        {
            "family": "G Shobha"
        },
        {
            "family": "L. Hari Prasad"
        }
    ],
    "issued": {
        "date-parts": [
            [
                2020,
                12,
                29
            ]
        ]
    },
    "volume": "05",
    "issue": "06",
    "page": "175-177",
    "publisher": "Longman Publishers",
    "language": "en",
    "abstract": "Channel electron and hole mobilities in MOSFETs have been extracted in terms of the eRective vertical field for several substrate biases. After ascertaining that the 2-D drift–diRusion numerical device simulator is reproducing the substrate charge variation in the MOSFET with respect to the gate voltage, obtained from C–V data, the mobility versus eRective field behavior is extracted by comparing the simulated and measured Id–Vgs characteristics. A simple model has been constructed to fit the extracted mobility data in weak and strong inversion, for inversion-layer electrons and holes in n-MOSFET and p-MOSFET, respectively. © 2002 Elsevier Science Ltd. All rights reserved.",
    "ISSN": "2456-5660"
}

From the record as registered (version 2) — the record and its history. Programs: https://registry.smartscholars.in/api.php?action=cite&doi=10.46243%2Fjst.2020.v5.i06.pp175-177 gives all four in one JSON answer.