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Slotboom, ―The evolution of the GROUND VEHICLES mobility model,‖ Solid-State Electron., vol. 33, no. 11, p. 1425, 1990" }, { "path": "references.20.doi", "from": null, "to": "10.1109/iedm.1993.347216" }, { "path": "references.20.key", "from": null, "to": "ref21" }, { "path": "references.20.unstructured", "from": null, "to": "M. R. Pinto, C. S. Rafferty, R. K. Smith, and J. Bude, ―ULSI technology development by predictive simulation,‖ in IEDM Tech. Dig., 1993, p. 701" }, { "path": "references.21.doi", "from": null, "to": "10.1109/t-ed.1983.21251" }, { "path": "references.21.key", "from": null, "to": "ref22" }, { "path": "references.21.unstructured", "from": null, "to": "B. R. Penumalli, ―A comprehensive two-dimensional process simulation program, BICEPS,‖ IEEE Trans. Electron Devices, vol. 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Hillenius, ―Anomalous short-channel threshold voltage due to transient enhanced diffusion,‖ in IEDM 1993, p. 311" }, { "path": "references.24.doi", "from": null, "to": "10.1109/16.502426" }, { "path": "references.24.key", "from": null, "to": "ref25" }, { "path": "references.24.unstructured", "from": null, "to": "H. H. Vuong, C. S. Rafferty, S. A. Eshraghi, J. L. Lentz, P. M. Zeitzoff, M. R. Pinto, and S. J. Hillenius, ―Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PGROUND VEHICLES devices,‖ IEEE Trans. Electron Devices, vol. 43, p. 1144, 1996" }, { "path": "references.3.doi", "from": null, "to": "10.1016/0038-1101(91)90123-g" }, { "path": "references.3.key", "from": null, "to": "ref4" }, { "path": "references.3.unstructured", "from": null, "to": "H. Shin, G. M. Yeric, A. F. Tasch, and C. M. 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In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLES I V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature", "lang": "en" }, "license": { "url": "https://creativecommons.org/licenses/by/4.0/", "start": "2022-12-21", "applies_to": "vor" }, "references": [ { "key": "ref1", "unstructured": "A.c Jm. Walker and P. H. Worlee, ―A mobility model for GROUND VEHICLESFET device simulation,‖ in Proc. Europ. Solid-State Dev. 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Electron Devices, vol. ED-30, pp. 1634–1639, Dec. 1983" }, { "key": "ref13", "doi": "10.1016/0039-6028(76)90131-x", "unstructured": "A. Hartstein, T. H. Ning and, A. B. Fowler, ―Electron scattering in silicon inversion layers by oxide and surface roughness,‖ Surf. Sci., vol. 58, p. 178, 1976" }, { "key": "ref14", "doi": "10.7567/jjaps.2s2.367", "unstructured": "Y. Matsumoto and Y. Uemura, ―Scattering mechanism and low temper- ature mobility of GROUND VEHICLES inversion layers,‖ Jpn. J. Appl. Phys., supp. 2. pt. 2, p. 367, 1974" }, { "key": "ref15", "unstructured": "W. Haa¨nsch and M. Miura-Mattausch, ―A new current relation for hot electron transport,‖ INASECODE IV, J. J. H. Miller, Ed. Dublin, Ireland: Boole, 1985, pp. 311–314" }, { "key": "ref16", "doi": "10.1063/1.327885", "unstructured": "K. K. Thornber, ―Relation of drift velocity to low-field mobility and high-field saturation velocity,‖ J. Appl. Phys., vol. 51, pp. 2127–2136, 1980" }, { "key": "ref17", "doi": "10.1002/j.1538-7305.1989.tb00321.x", "unstructured": "K. Singhal, C. C. McAndrew, S. R. Nassif, and V. Visvanathan, ―The CENTER design optimization system,‖ AT&T Tech. J., vol. 68, no. 3, p. 77, May/June 1989" }, { "key": "ref18", "doi": "10.1109/16.214740", "unstructured": "C.-L. Huang, J. V. Faricelli, and N. D. Arora, ―A new technique for measuring GROUND VEHICLESFET inversion layer mobility,‖ IEEE Trans. Electron Devices, vol. 40, pp. 1134–1139, June 1993" }, { "key": "ref19", "unstructured": "J. T. Watt and J. D. Plummer, in 1987 Symp. VLSI Technol. Dig. Tech. Papers, 1987, p. 81" }, { "key": "ref20", "unstructured": "V. M. Agostinelli, Jr., unpublished" }, { "key": "ref21", "doi": "10.1109/iedm.1993.347216", "unstructured": "M. R. Pinto, C. S. Rafferty, R. K. Smith, and J. Bude, ―ULSI technology development by predictive simulation,‖ in IEDM Tech. Dig., 1993, p. 701" }, { "key": "ref22", "doi": "10.1109/t-ed.1983.21251", "unstructured": "B. R. Penumalli, ―A comprehensive two-dimensional process simulation program, BICEPS,‖ IEEE Trans. Electron Devices, vol. ED-30, Sept. 1983" }, { "key": "ref23", "doi": "10.1109/iedm.1992.307507", "unstructured": "M. R. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, C. Kizilyalli, and M. J. Thoma, ―Three-dimensional characterization of bipolar transistors on a submicron BiCGROUND VEHICLES technology using integrated process and device simulation,‖ in IEDM 1992, p. 923" }, { "key": "ref24", "doi": "10.1109/vpad.1993.724763", "unstructured": "C. S. Rafferty, H.-H. Vuong, S. A. Eshraghi, M. D. Giles, M. R. Pinto, and S. J. Hillenius, ―Anomalous short-channel threshold voltage due to transient enhanced diffusion,‖ in IEDM 1993, p. 311" }, { "key": "ref25", "doi": "10.1109/16.502426", "unstructured": "H. H. Vuong, C. S. Rafferty, S. A. Eshraghi, J. L. Lentz, P. M. Zeitzoff, M. R. Pinto, and S. J. Hillenius, ―Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PGROUND VEHICLES devices,‖ IEEE Trans. Electron Devices, vol. 43, p. 1144, 1996" } ], "record": { "registrant": "Longman Publishers", "registered": "2024-02-16", "updated": "2026-09-17", "issue_number": 1, "source": "crossref-api", "source_agency": "Crossref (member 25296)" } }, "url_after": "https://www.jst.org.in/index.php/pub/article/view/909", "sha256_before": null, "sha256_after": "32485526ab79d3d4f8328dd3ba65a6b6210a6a7dbb8f2835b02cc9384a43d061" }, { "seq": 2, "kind": "update", "at": "2026-09-29 23:59:46", "by": "Administrator (admin)", "by_kind": "user", "note": "record re-read from api.crossref.org", "changes": [ { "path": "container.titles.0.value", "from": "Journal of Science & Technology", "to": "Journal of Science & Technology" } ], "record_after": { "format": "smartscholars-doi-metadata/1.0", "doi": "10.46243/jst.2022.v7.i10.pp112-115", "referent": "Creation", "type": "JournalArticle", "structural_type": "Digital", "modes": [ "Visual" ], "characters": [ "Language" ], "titles": [ { "value": "Path Planning based on Bezier Curve for ´ Autonomous Ground Vehicles", "type": "PrincipalTitle", "lang": "en" } ], "identifiers": [ { "type": "DOI", "value": "10.46243/jst.2022.v7.i10.pp112-115" } ], "agents": [ { "role": "author", "name": { "given": "B Naga Raju", "family": "B Naga Raju" }, "sequence": "first" }, { "role": "publisher", "name": { "org": "Longman Publishers" } } ], "dates": { "published": "2022-12-21", "date_type": "PublicationDate", "online": "2022-12-21" }, "language": "en", "container": { "type": "Journal", "titles": [ { "value": "Journal of Science & Technology", "type": "PrincipalTitle" } ], "identifiers": [ { "type": "ISSN", "value": "2456-5660", "medium": "electronic" } ], "volume": "7", "issue": "10", "pages": { "first": "112", "last": "115" } }, "links": [ { "url": "https://www.jst.org.in/index.php/pub/article/view/909", "return_type": "text/html", "primary": true }, { "url": "https://www.jst.org.in/index.php/pub/article/download/909/836", "purpose": "text-mining", "return_type": "application/pdf" }, { "url": "https://www.jst.org.in/index.php/pub/article/download/909/1949", "purpose": "text-mining", "return_type": "application/xml" }, { "url": "https://jst.org.in/admin/uploads/43%20jst%202022.pdf", "purpose": "similarity-checking" } ], "abstract": { "value": "A new, comprehensive, physically-based, semi- empirical, local model for transverse-field dependent electron and hole mobility in GROUND VEHICLES transistors is presented. In order to accurately predict the measured relationship between the effective mobility and effective electric field over a wide range of substrate doping and bias, we account for the dependence of surface roughness limited mobility on the inversion charge density, in addition to including the effect of coulomb screening of impurities by charge carriers in the bulk mobility term. The result is a single mobility model applicable throughout a generalized device structure that gives good agreement with measured mobility data and measured GROUND VEHICLES I V characteristics over a wide range of substrate doping, channel length, transverse electric field, substrate bias, and temperature", "lang": "en" }, "license": { "url": "https://creativecommons.org/licenses/by/4.0/", "start": "2022-12-21", "applies_to": "vor" }, "references": [ { "key": "ref1", "unstructured": "A.c Jm. Walker and P. H. Worlee, ―A mobility model for GROUND VEHICLESFET device simulation,‖ in Proc. Europ. Solid-State Dev. Res. Conf. (ESSDERC), 1988, p. 265" }, { "key": "ref2", "doi": "10.1109/16.108191", "unstructured": "C.-L. Huang and G. S. Gildenblat, ―Measurements and modeling of the n-channel GROUND VEHICLESFET inversion layer mobility and device characteristics in the temperature range 60–300 K,‖ IEEE Trans. Electron Devices, vol. 37, p. 1289, May 1990" }, { "key": "ref3", "doi": "10.1016/0038-1101(90)90117-w", "unstructured": "S. Selberherr, W. Ha¨nsch, M. Seavey, and J. Slotboom, ―The evolution of the GROUND VEHICLES mobility model,‖ Solid-State Electron., vol. 33, no. 11, p. 1425, 1990" }, { "key": "ref4", "doi": "10.1016/0038-1101(91)90123-g", "unstructured": "H. Shin, G. M. Yeric, A. F. Tasch, and C. M. Maziar, ―Physically-based models for effective mobility and local-field mobility of electrons in GROUND VEHICLES inversion layers,‖ Solid-State Electron., vol. 34, no. 6, p. 545, 1991" }, { "key": "ref5", "doi": "10.1109/43.9186", "unstructured": "C. Lombardi, S. Manzini, A. Saporito, and M. 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Computer-Aided Design, vol. 11, pp. 1114–1119, Sept. 1992" }, { "key": "ref9", "doi": "10.1109/iedm.1979.189528", "unstructured": "A. G. Sabnis and J. T. Clemens, ―Characterization of the electron mobility in the Inverted h100i Si substrate,‖ in IEEE IEDM Tech. Dig., 1979, pp. 18–21" }, { "key": "ref10", "doi": "10.1016/0038-1101(92)90325-7", "unstructured": "D. B. M. Klaassen, ―A unified mobility model for device simula- tion—Part I: Model equations and concentration dependence,‖ Solid- State Electron., vol. 35, no. 7, pp. 953–959, 1992" }, { "key": "ref11", "doi": "10.1103/physrevb.19.6433", "unstructured": "S. Mori and T. Ando, ―Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperature,‖ Phys. Rev. B., vol. 19, p. 6433, 1979" }, { "key": "ref12", "doi": "10.1109/t-ed.1983.21424", "unstructured": "S. A. Schwarz and S. E. Russek, ―Semi-empirical equations for electron velocity in silicon—Part II: GROUND VEHICLES inversion layer,‖ IEEE Trans. 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Dig., 1993, p. 701" }, { "key": "ref22", "doi": "10.1109/t-ed.1983.21251", "unstructured": "B. R. Penumalli, ―A comprehensive two-dimensional process simulation program, BICEPS,‖ IEEE Trans. Electron Devices, vol. ED-30, Sept. 1983" }, { "key": "ref23", "doi": "10.1109/iedm.1992.307507", "unstructured": "M. R. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, C. Kizilyalli, and M. J. Thoma, ―Three-dimensional characterization of bipolar transistors on a submicron BiCGROUND VEHICLES technology using integrated process and device simulation,‖ in IEDM 1992, p. 923" }, { "key": "ref24", "doi": "10.1109/vpad.1993.724763", "unstructured": "C. S. Rafferty, H.-H. Vuong, S. A. Eshraghi, M. D. Giles, M. R. Pinto, and S. J. Hillenius, ―Anomalous short-channel threshold voltage due to transient enhanced diffusion,‖ in IEDM 1993, p. 311" }, { "key": "ref25", "doi": "10.1109/16.502426", "unstructured": "H. H. Vuong, C. S. Rafferty, S. A. Eshraghi, J. L. Lentz, P. M. Zeitzoff, M. R. Pinto, and S. J. Hillenius, ―Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PGROUND VEHICLES devices,‖ IEEE Trans. Electron Devices, vol. 43, p. 1144, 1996" } ], "record": { "registrant": "Longman Publishers", "registered": "2024-02-16", "updated": "2026-09-17", "issue_number": 1, "source": "crossref-api", "source_agency": "Crossref (member 25296)" } }, "url_after": "https://www.jst.org.in/index.php/pub/article/view/909", "sha256_before": "32485526ab79d3d4f8328dd3ba65a6b6210a6a7dbb8f2835b02cc9384a43d061", "sha256_after": "1541d1770240ded0e9b86e4129cfc1ab0185d4a48cbec3d69261fd35d4397a50" } ] }